Ferroelectricity in Doped Hafnium Oxide Book Description : Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials.

In the last few years, doped metal oxides, including hafnium oxide (Hf0 2) and zirconium oxide (ZrO 2), were found to have ferroelectric phase [1]-[2]. Ferroelectric HfO 2 has the advantages of a high coercive field, excellent scalability (down to 2.5nm), and good compatibility with CMOS processing [3]-[7].

The 10 nm thick yttrium doped hafnium oxide (Y:HfO 2) thin films, prepared by chemical solution deposition which using all-inorganic aqueous salt reagents, were fabricated on Si (100) substrates.The crystalline structure, chemical composition and ferroelectric properties of thin films, annealed in protection atmosphere of Air, Ar and N 2, were examined.

Ferroelectric doped hafnium oxide and its application on electronic devices. Ferroelectricity is the material property such that we can induce spontaneous polarization, reverse it and modulate it by varying the applied electrical field on the ferroelectric material. Recently, doped hafnium oxide (HfO2) has garnered attention with its excellent ...

A method for preparing a scandium-doped hafnium oxide film, includes preparing a hafnium target having scandium granules distributed on a peripheral surface thereof; and proceeding a sputtering process to form a scandium-doped hafnium oxide film on a substrate, wherein the scandium doping of the scandium-doped hafnium oxide film is in the range of 3-13%.

Catalytic oxidation of CO over CexHf1 - xO2 (CH; 8:2 mole ratio) and CexZr1 - xO2 (CZ; 1:1 mole ratio) nanocomposite oxides reveals that the former combination exhibits more conversion at much lower temperature than the latter. Thermal and textural stability of both the combinations, obtained by a coprecipitation method and calcined at 773 and 1073 K, were examined by X-ray diffraction, …

few years, doped metal oxides, including hafnium oxide (HfO 2) and zirconium oxide (ZrO 2), were found to have ferroelectric phase [1-2]. Ferroelectric HfO 2 has the advantages of a high coercive field, excellent scalability (down to 2.5nm), and good compatibility with CMOS processing [3-7]. In this paper, we systematically investigate Al-doped ...

Ferroelectricity in Doped Hafnium Oxide. Ferroelectricity in Doped Hafnium Oxide covers all aspects related to the structural and electrical properties of semiconductor devices, and the implementation of ferroelectric HfO 2 - and ZrO 2-based thin films into these devices, including a comparison to standard ferroelectric materials.Ferroelectric and field-induced ferroelectric properties are ...

Hafnium oxide layers doped with trivalent terbium ions have been synthesized using the ultrasonic spray pyrolysis technique. Photoluminescence properties were studied as a function of growth parameters such as the substrate temperature and the terbium concentration

The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems. Katrin Zimmermann is acknowledged for the TEM analysis and Joachim Metzger for supporting the PVD top electrode process.

Piezoelectric Response of Polycrystalline Silicon-Doped Hafnium Oxide Thin Films Determined by Rapid Temperature Cycles Clemens Mart,* Thomas Kämpfe, Raik Hoffmann, Sophia Eßlinger, Sven Kirbach, Kati Kühnel, Malte Czernohorsky, Lukas M. Eng, and Wenke Weinreich DOI: 10.1002/aelm.201901015 hafnium oxide combines sizeable spon-

The ferroelectric behaviour of silicon doped hafnium oxide has been investigated using metal–insulator–metal capacitor structures for film thicknesses of 9 and 27 nm, annealing temperatures between 450 and 1000 °C and silicon contents from 0 to 8.5 %.For the 9 nm thick films, an improvement of the ferroelectric remanent polarization was revealed for decreasing silicon content …

Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors. Article Preview. Abstract: Ferroelectrics are very interesting materials for nonvolatile data storage due to the fact that they deliver very low power programming operation combined with nonvolatile retention. For 60 years researchers have been inspired by these ...

Recently, doped hafnium oxide (HfO 2 ) has garnered attention with its excellent scalability, reliability, and compatibility with the current CMOS process. This thesis introduces two research projects aimed at improving the electrical properties of ferroelectric-doped HfO 2 for various device applications.

Ferroelectric yttrium-doped hafnium-zirconium dioxide (Y-HZO) thin films were fabricated by solution process on Pt/Ti/SiO 2 /Si substrates. Both metal–ferroelectric–metal (MFM) structures with Pt top electrode and metal–ferroelectric–semiconductor (MFS) structures with indium tin oxide (ITO) top electrode were fabricated and characterized.

Nanocrystalline Silicon Embedded Zirconium-Doped Hafnium Oxide High-k Memory DeviceJiang LU, Yue KUO, Jiong YAN and Chen-Han LIN Thin Film Nano and Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A.

Various examples are provided related to hydrogen plasma treatment of hafnium oxide. In one example, a method includes depositing a monolayer of a precursor on a first oxide monolayer; forming a second oxide monolayer by applying an oxygen (O2) plasma to the monolayer of the precursor; and creating oxygen vacancies in the second oxide monolayer by applying a hydrogen (H2) plasma to the second ...

Abstract: Ferroelectricity in hafnium oxide has been reported for the incorporation of Al, Si, Y and Gd or in a solid solution with the chemically similar ZrO 2 . Here, we report strontium as the first bivalent and — so far — largest dopant in terms of atomic radius also inducing ferroelectric behavior.

The microstructure of ferroelectric hafnium oxide plays a vital role for its application, e.g., non-volatile memories. In this study, transmission Kikuchi diffraction and scanning transmission electron microscopy STEM techniques are used to compare the crystallographic phase and orientation of Si and Zr doped HfO2 thin films as well as integrated in a 22 nm fully-depleted silicon-on-insulator ...

Abstract. The effect of the sintering temperature on the luminescence of trivalent dysprosium ion doped hafnium oxide compounds is studied. Temperature treatments of 400°C, 600°C, 800°C, and 1000°C over a period of 12 hours were used to prepare all the samples.

Hafnium oxide doped silica films with ordered mesostructures were produced with hafnium:silicon ratios between 1:60 and 1:6. A surfactant–hafnium alkoxide complex was synthesized and used as a template in a sol–gel dip-coating process.

Silicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the world's first ferroelectric field-effect transistor in the …

Hafnium-Doped Tantalum Oxide High-K Gate Dielectric Films for Future CMOS Technology. (December 2005) Jiang Lu, B.S., East China University of Science and Technology, Shanghai, China Chair of Advisory Committee: Dr. Yue Kuo A novel high-k gate dielectric material, i.e., hafnium-doped tantalum oxide (Hf-doped

Hafnium and Hydrogen co-doped indium oxide films (IHFO:H) were prepared by radio frequency magnetron sputtering technology. The effect of hydrogen-donor dopant on the structural, optical and electrical properties of the films was investigated systematically.

Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is ...

Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films Alejandro Ortega University of Texas at El Paso, [email protected] Follow this and additional works at:https://digitalcommons.utep.edu/open_etd Part of theMaterials Science and Engineering Commons,Mechanics of Materials Commons, and theOptics Commons

36th Annual Microelectronic Engineering Conference, April 2018 1 Annealing Study of ALD Deposited Ferroelectric Aluminum-doped Hafnium Oxide Joshua L. Eschle, Dr. Santosh Kurinec ABSTRACT With the acquisition of a Savannah ALD tool

Ferroelectricity in Doped Hafnium Oxide. Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ...

the yttrium doped hafnium oxide (y:hfo2) thin films were deposited onto heavily doped p-type (100) silicon substrates with a low resistivity of 10−2 − 10 −3 ω•cm. prior to deposition, all substrates underwent a standard rca cleaning process and then were subjected a plasma etch for 10 min to improve the wettability between precursor solution and …

Exploring New Metal Electrodes for Ferroelectric Aluminum-Doped Hafnium Oxide Abstract: In this paper, we explore new metal electrodes for ferroelectric capacitors based on Al-doped HfO 2 . We find that Ti/Pd, Ti/Au, and W top electrodes can induce much higher remanent polarization as compared to the traditional TiN top electrode.

calcium doped hafnium oxide (Ca:HfO 2) is still missing. In this study, we show for the first time that ferroelectricity in hafnium oxide is able to be achieved by using bivalent calcium as a dopant.